HiPerFET TM Power MOSFETs
V DSS
I D25
R DS(on)
ISOPLUS247 TM Q CLASS
IXFR 12N100Q 1000 V 10 A
IXFR 10N100Q 1000 V 9 A
1.1 ?
1.20 ?
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
t rr ≤ 300 μ s
Symbol
Test Conditions
Maximum Ratings
ISOPLUS 247 TM
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
1000
1000
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
Isolated back surface*
I D25
T C = 25 ° C
12N100
10
A
Silicon chip on Direct-Copper-Bond
I DM
I AR
E AR
dv/dt
P D
T C = 25 ° C, Pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
10N100
12N100
10N100
12N100
10N100
9
48
40
12
10
30
5
250
A
A
A
A
A
mJ
V/ns
W
G = Gate D = Drain
S = Source
* Patent pending
Features
substrate
- High power dissipation
T J
T JM
T stg
T L
1.6 mm (0.063 in.) from case for 10 s
-55 ... +150
150
-55 ... +150
300
° C
° C
° C
° C
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
V ISOL
Weight
50/60 Hz, RMS
t = 1 min
2500
5
V~
g
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
V DSS
V GS(th)
V GS = 0 V, I D = 3mA
V DS = V GS , I D = 4mA
1000
2.5
5.5
V
V
DC choppers
AC motor control
I GSS
V GS = ± 20 V DC , V DS = 0
± 100
nA
Advantages
I DSS
R DS(on)
V DS = 0.8?V DSS
V GS = 0 V
V GS = 10 V, I D = I T
Notes 1 & 2
T J = 25 ° C
T J = 125 ° C
12N100
10N100
50
1
1.1
1.2
μ A
mA
?
?
Easy assembly
Space savings
High power density
? 2002 IXYS All rights reserved
DS98589-B (10/02)
相关PDF资料
IXFR140N20P MOSFET N-CH 200V 90A ISOPLUS247
IXFR140N30P MOSFET N-CH 300V 70A ISOPLUS247
IXFR150N15 MOSFET N-CH 150V 105A ISOPLUS247
IXFR15N100Q3 MOSFET N-CH 1000V 10A ISOPLUS247
IXFR15N80Q MOSFET N-CH 800V 13A ISOPLUS247
IXFR180N06 MOSFET N-CH 60V 180A ISOPLUS247
IXFR180N085 MOSFET N-CH 85V 180A ISOPLUS247
IXFR180N10 MOSFET N-CH 100V 165A ISOPLUS247
相关代理商/技术参数
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IXFR12N100 功能描述:MOSFET N-CH 1000V 10A ISOPLUS247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HiPerFET™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
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IXFR12N100Q 功能描述:MOSFET 12 Amps 1000V 1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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IXFR140N20P 功能描述:MOSFET 75 Amps 200V 0.018 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR140N30P 功能描述:MOSFET 82 Amps 300V 0.026 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube